30 Apr '13, 8pm

New method joins gallium nitride and diamond for better thermal management

New Method Joins Gallium Nitride and Diamond for Better Thermal Management April 30, 2013 Many military radio frequency (RF) systems, like radar and communication systems, use a class of power amplifiers (PAs) called monolithic microwave integrated circuits (MIMIC). MMIC PAs using gallium nitride (GaN) transistors hold great promise for enhanced RF performance, but operational characteristics are strongly affected by thermal resistance. Much of this resistance comes at the thermal junction where the substrate material of the circuit connects to the GaN transistor. If the junction and substrate have poor thermal properties, temperature will rise and performance will decrease. DARPA’s Near Junction Thermal Transport (NJTT) effort recently demonstrated the first-ever GaN-on-diamond high electron mobility transistor (HEMT). In early tests, the GaN-on-diamond transistor display...

Full article: http://www.darpa.mil/NewsEvents/Releases/2013/04/30a.aspx

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